NCP302LSNXXT1G NCP302HSNXXT1G NCP303LSNXXT1G TSOP-5 Voltage Detector Series with Programmable Delay PDF
2026-04-22 Blog NCP302LSNXXT1G NCP302HSNXXT1G NCP303LSNXXT1G
K4AAG165WC-BCWE Samsung 16Gb DDR4 – The Industrial-Grade Memory Solution for Server & AI Computing Amid Supply Crunch
2026-07-02 Blog Samsung K4AAG165WC-BCWE is a 16Gb DDR4 SDRAM organized as 1Gx16, delivering 2666-3200Mbps data rate at 1.2V in a 96-ball FBGA package. With industrial-grade reliability and wide temperature support, it's ideal for servers, industrial control, networking, and AI computing. Amid ongoing DDR4 supply constraints and price surges, this industrial-grade memory offers a stable solution for critical systems.
Samsung K4AAG165WC-BCWE is a 16Gb DDR4 SDRAM organized as 1G x 16 bits, operating at 1.2V with data rates up to 3200Mbps. Industrial temperature range -40°C to +95°C, 96-ball FBGA package. Ideal for servers, industrial control, networking, and embedded systems requiring high reliability.
TMS320C6416TCLZ Fixed-Point Digital Signal Processor | Texas Instruments Original Stock
2026-06-18 Blog TMS320C6416TCLZ Fixed-Point DSP Texas Instruments Original Stock 1GHz 8000 MIPS Viterbi/Turbo FCBGA-532
Catalog Product SummaryFeatures and BenefitsMechanical DataMaximum RatingsThermal CharacteristicsElectrical CharacteristicsPackage Outline DimensionsSuggested Pad LayoutDatasheet PDF DownloadFAQ Product Summary BVDSS RDS(on) max ID TA = +25°C 50V 10Ω @ VGS = -5V -130mA Description and ApplicationsThis MOSFET has been designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficienc ...
Catalog Product SummaryFeatures and BenefitsMechanical DataMaximum RatingsThermal CharacteristicsElectrical CharacteristicsPackage Outline DimensionsSuggested Pad LayoutDatasheet PDF DownloadFAQ Product Summary BVDSS RDS(on) max ID TA = +25°C 50V 10Ω @ VGS = -5V -130mA Description and ApplicationsThis MOSFET has been designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficienc ...
Catalog Product SummaryFeatures and BenefitsMechanical DataMaximum RatingsThermal CharacteristicsElectrical CharacteristicsPackage Outline DimensionsSuggested Pad LayoutDatasheet PDF DownloadFAQ Product Summary BVDSS RDS(on) max ID TA = +25°C 50V 10Ω @ VGS = -5V -130mA Description and ApplicationsThis MOSFET has been designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficienc ...
Catalog Product SummaryFeatures and BenefitsMechanical DataMaximum RatingsThermal CharacteristicsElectrical CharacteristicsPackage Outline DimensionsSuggested Pad LayoutDatasheet PDF DownloadFAQ Product Summary BVDSS RDS(on) max ID TA = +25°C 50V 10Ω @ VGS = -5V -130mA Description and ApplicationsThis MOSFET has been designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficienc ...
Catalog Product SummaryFeatures and BenefitsMechanical DataMaximum RatingsThermal CharacteristicsElectrical CharacteristicsPackage Outline DimensionsSuggested Pad LayoutDatasheet PDF DownloadFAQ Product Summary BVDSS RDS(on) max ID TA = +25°C 50V 10Ω @ VGS = -5V -130mA Description and ApplicationsThis MOSFET has been designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficienc ...
Catalog Product SummaryFeatures and BenefitsMechanical DataMaximum RatingsThermal CharacteristicsElectrical CharacteristicsPackage Outline DimensionsSuggested Pad LayoutDatasheet PDF DownloadFAQ Product Summary BVDSS RDS(on) max ID TA = +25°C 50V 10Ω @ VGS = -5V -130mA Description and ApplicationsThis MOSFET has been designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficienc ...
Catalog Product SummaryFeatures and BenefitsMechanical DataMaximum RatingsThermal CharacteristicsElectrical CharacteristicsPackage Outline DimensionsSuggested Pad LayoutDatasheet PDF DownloadFAQ Product Summary BVDSS RDS(on) max ID TA = +25°C 50V 10Ω @ VGS = -5V -130mA Description and ApplicationsThis MOSFET has been designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficienc ...
